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4-8 workdays (only 8 left in stock) |
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| Sales Rank: |
#35 in Internal SSD #1675 in Computer |
 | | Style: |
Internal SSD |
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| Product No.: |
2101281033 |
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| Description: | ? Typ: Solid State Module, M.2 2280, M.2 PCIe 5.0 x2 ? Geschwindigkeit: (L) 7150MB/s - (S) 6300MB/s ? Module: 3D-NAND TLC ? TBW: 600TB Die Samsung 990 EVO Plus ist ein internes Solid State-Laufwerk, das für anspruchsvolle Anwendungen entwickelt wurde. Mit einer robusten Kapazität von 1 TB bietet sie reichlich Speicherplatz für eine Vielzahl von Dateien und Anwendungen. Das Laufwerk nutzt PCI Express 5.0 und bietet interne Datenraten von bis zu 7150 MB/s, was einen schnellen Datenabruf und minimale Ladezeiten ermöglicht. Die V-NAND TLC-Technologie von Samsung verbessert die Leistung und Ausdauer, so dass sie sich sowohl für den täglichen GePCIe 4.0 x4 / 5.0 x2, NVMe 2, M.2 2280, internKapazität: 1 TBDatentransferrate: Lesen: 7.150 MB/s, Schreiben: 6.300 MB/sIOPS: Lesen: 850.000, Schreiben: 1.350.000Kurzinfo: Samsung 990 EVO Plus MZ-V9S1T0 - SSD - verschlüsselt - 1 TB - intern - M.2 2280 - PCIe 5.0 x2 (NVMe) - 256-Bit-AES - TCG Opal Encryption 2.0 Gruppe Festplatten Hersteller Samsung Hersteller Art. Nr. MZ-V9S1T0BW EAN/UPC 8806095575674 Produktbeschreibung: Samsung 990 EVO Plus MZ-V9S1T0 - SSD - 1 TB - PCIe 5.0 x2 (NVMe) Typ Solid State Drive - intern Kapazität 1 TB Hardwareverschlüsselung Ja Verschlüsselungsalgorithmus 256-Bit-AES NAND-Flash-Speichertyp TLC (Triple-Level Cell) Formfaktor M.2 2280 Schnittstelle PCIe 5.0 x2 (NVMe) Merkmale Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Geräte-Schlafunterstützung, Host Memory Buffer (HMB), TRIM-Unterstützung, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667 Abmessungen (Breite x Tiefe x Höhe) 22.15 mm x 80.15 mm x 2.38 mm Gewicht 9 g Ausführliche Details Allgemein Gerätetyp Solid State Drive - intern Kapazität 1 TB Hardwareverschlüsselung Ja Verschlüsselungsalgorithmus 256-Bit-AES NAND-Flash-Speichertyp TLCThe Samsung 990 EVO Plus NVMe PCIe 5.0 x2 M.2 SSD with a capacity of 1TB is designed for users who demand top-tier performance and reliability in their storage solutions. Leveraging the advanced PCIe Gen5 interface, this SSD delivers blazing-fast read and write speeds, making it ideal for gaming enthusiasts, content creators, and professionals working with large files or demanding applications. With sequential read speeds up to 5000 MB/s and write speeds up to 4200 MB/s (depending on system configuration), you can expect rapid boot times, swift file transfers, and seamless multitasking.
Samsung integrates its proprietary V-NAND technology along with an optimized controller to ensure durability and energy efficiency while maintaining high-speed data processing. The drive supports advanced features such as AES 256-bit hardware encryption for enhanced data security.
This product is perfect for upgrading desktops or laptops that support M.2 NVMe drives?whether you're building a new PC or enhancing your current setup's responsiveness and storage capabilities.
As one of the world?s leading electronics manufacturers, Samsung has a strong commitment to sustainability through eco-friendly production processes, reduced carbon emissions across its supply chain, responsible sourcing of materials, and recycling initiatives. By choosing this SSD from Samsung, customers not only benefit from cutting-edge technology but also contribute positively towards environmental protection efforts?a step toward a greener future. |  | | Manufacturer No.: |
MZ-V9S1T0BW |
 | Product Safety
Responsible Person for the EU:
Samsung Frankfurter Straße 2, 65760 Eschborn, Deutschland kundenbetreuung@samsung.de |  |
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